5 wt.% and the temperature was −4°C; the sample was anodized for an ultrashort time (30 to selleck screening library 150 s). To enlarge the holes, a phosphoric solution with the concentrations of 5 wt.% was employed at 45°C, with the time of 20 min and 30 min. As for the rest of the samples, the target voltage was 40 V and the anodization process was performed in an electrolyte of water in which the concentrations of oxalic acid were 0.3 M. The temperature was 4°C, and the anodizing time range was 15 to 105 min. Characterization The current-time transients of

the anodization were record by a programmed power source (Agilent, N5752, Santa Clara, CA, USA) linked to a computer. Field emission scanning electron microscopy (FESEM) micrographs were obtained by FE-SEM Philips Sirion 200 (Amsterdam, The Netherlands) to analyse the structure of the AAO films. Results and discussion Fast anodization process in phosphoric acid Raising the current density, the AAO film can be formed efficiently, as shown in Figure 1, in which curves of the current density were recorded during the anodization of bare ITO and thin Al films (2 µm) in 5 wt.% phosphoric acid solution at 195 V. The anodic current density of bare ITO glass surged first, and after the initial stage, it decreased rapidly to a steady value of 100 mA/cm2. Other lines are the anodization curves of the sputtered aluminum with

the anodizing time of 30, 40, 60, 90, and 150 s. Apparently, the www.selleckchem.com/products/selonsertib-gs-4997.html anodization curves of these sputtered aluminum has a similar process, indicating that the process has an excellent repetition. At the first stage, which happens at 0 to 2 s, the curves Flavopiridol (Alvocidib) show a dramatic decrease in current density. As Hill et al. have reported [21], this is owing to the formation of planar surface oxide on the aluminum film, and the resistance of the electrode increases

as the surface oxide layer continues to grow. The second stage happens at 2 to 6 s [27], when the oxide changed to a dimpled array under the force of interfacial electric field. In this stage (2 to 6 s), in spite of the change in surface morphology, the surface oxide thickness at the bottom of the pores remains relatively constant. The oxygen through the oxide layer can be driven by the electric field as before, so the electrochemical oxidation of aluminum continues. When the surface layer had dimples, electrochemical reaction occurs at these Dasatinib order dimple sites preferentially. With the dimples continuing to bore into the aluminum and grow into fully formed pores, the active surface area increases substantially. This increase in electrode surface area leads to the increase in current density since it is relative to the initial planar electrode surface area. Shortly after this process, the continued growth of the pores does not cause any increase in active electrode surface, so is the next stage (6 to 30 s).