The minor difference can be attributed to the different melting pathways (see Figure  4), which can be removed by employing much smaller ΔI for the microwire mesh with sacrifice of computational cost.

Figure 5 Variation of Z with n b in the melting process of both meshes. Generally, for the same material, T m, ρ, λ, and A are dependent on wire size, while S is dependent on mesh structure. For a given mesh structure with a known S, the VRT752271 nmr smaller A results in smaller T m and λ but larger ρ, and therefore smaller I m according to Equation 10. This point is the same with the above numerical results where the I m of the microwire mesh is significantly higher than that of the nanowire mesh (see Figure  3a). Therefore, it is expected that the obtained melting behavior of the microwire mesh can be used to predict that of the wire mesh with same

structure at the same working selleck chemicals condition even if made from a different wire (i.e., different size, different material) through simple conversion with the known Z. Taking the Ag nanowire mesh as an example, the conversion process is summarized here. First, the melting current I m for the nanowire mesh can be calculated from Equation 10 with the known Z. Second, the variation of the R m for nanowire mesh can be calculated from that for the microwire mesh in Figure  3b as (11) because of the same melting process. Note that ‘|NW’ and ‘|MW’ indicate the case for the Ag nanowire mesh and Ag microwire mesh, respectively. Third, the variation of V m for the Ag nanowire mesh can be calculated by multiplying the obtained R m and I m

from the above two steps. The PX-478 ic50 predicted melting behavior of the Ag nanowire mesh derived from the above indirect conversion is shown in Figure  6, which indicates good agreement with that obtained from direct numerical until simulation, and therefore validates the feasibility of the present conversion method. Figure  6 also gives the predicted melting behavior of the Al nanowire mesh with the same structure through indirect conversion. Obviously, the melting behavior of the mesh is largely dependent on the physical properties of the wire itself. Figure 6 Predicted melting behavior of Ag and Al nanowire meshes by conversion. It should be noted that the present boundary conditions and mesh structure are only one example. Certainly, boundary conditions and mesh structure will have great effect on the melting behavior of the wire mesh as well as physical properties of the wire itself. However, the consistent feature in the melting behavior among the wire meshes with the same structure under the same boundary conditions will not change. Therefore, the present findings can provide meaningful insight for the experimental investigation on the reliability of the metallic nanowire mesh-based TCE.