Our work provides these experimental data The correlation of the

Our work provides these experimental data. The correlation of these results with the MK 8931 Growth design and with the functional properties of these structures will allow closing the loop to optimize the performance of devices based

in stacking of QDs. Conclusions In summary, we have analyzed the 3D distribution of InAs/GaP/GaAs stacked QDs by electron tomography using HAADF images. For this, we have www.selleckchem.com/products/sbe-b-cd.html optimized the needle-shaped specimen fabrication procedure by FIB for samples with multiple layers of QDs. We have found that contrary to what could be derived from a 2D conventional TEM analysis, the QDs do not follow a vertical alignment, but there is a deviation angle of 10° ± 1°. The unambiguous determination of the 3D distribution of QDs is a key for the interpretation of the optoelectronic properties of devices based in stacking of QDs. Authors’ information JHS is a PhD student at the Universidad de Cádiz. MH

is an associate professor at the Departamento de Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica, Universidad de Cádiz. DAA holds a postdoctoral position as Research Associate in the School of Engineering and Physical Sciences at Heriot-Watt University selleck chemicals llc and the Scottish Institute for Solar Energy Research (SISER). SIM is a full professor at the Departamento de Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica, Universidad de Cádiz. Acknowledgments This work was supported by the Spanish MINECO (projects TEC2011-29120-C05-03 and Consolider Ingenio 2010 CSD2009-00013) and the Junta de Andalucía (PAI research group TEP-946 INNANOMAT).

TEM measurements were carried out at DME-SCCYT-UCA. References 1. Wegert M, Majer N, Ludge K, Dommers-Volkel S, Gomis-Bresco J, Knorr A, Woggon U, Scholl E: Nonlinear gain dynamics of quantum dot optical amplifiers. Semicond Sci Technol 2011, 26:014008.CrossRef 2. Bhattacharya P, Mi Z, Yang J, Basu D, Saha D: Quantum dot lasers: from promise to high-performance devices. J Cryst Growth 2009, 311:1625–1631.CrossRef 3. Gong Q, Chen P, Li SG, Lao YF, Cao CF, Xu CF, Zhang YG, Feng SL, Ma CH, Wang HL: Quantum dot lasers grown by gas source molecular-beam epitaxy. J Cryst Growth 2011, 323:450–453.CrossRef 4. Tersoff J, Teichert C, Lagally MG: Self-organization in growth of quantum dot Interleukin-3 receptor superlattices. Phys Rev Lett 1996, 76:1675–1678.CrossRef 5. Wang ZM, Holmes K, Mazur Yu I, Salamo GJ: Fabrication of (In, Ga)As quantum-dot chains on GaAs(100). Appl Phys Lett 2004, 84:1931–1933.CrossRef 6. Wang Zh M, Seydmohamadi S, Lee JH, Salamo GJ: Surface ordering of (In, Ga)As quantum dots controlled by GaAs substrate indexes. Appl Phys Lett 2004, 85:5031–5033.CrossRef 7. Zhi D, Davock H, Murray R, Roberts C, Jones TS, Pashley DW, Goodhew PJ, Joyce BA: Quantitative compositional analysis of InAs/GaAs quantum dots by scanning transmission electron microscopy. J Appl Phys 2001, 89:2079–2083.CrossRef 8.

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